TK1K7A60F,S4X, MOSFET TO-220SIS PD=35W 1MHz PWR MOSFET TRNS

π-MOS IX Planar Power MOSFETs Toshiba -MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. -MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the -MOS IX components provide 5dB lower peak EMI noise than the previous -MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the -MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.