TK32A12N1,S4X, MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V

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Номенклатурный номер: 8005269425

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

N-канал 120V 32A (Tc) 30W (Tc) сквозное отверстие TO-220SIS

Base Product Number	6N135 ->
Current - Continuous Drain (Id) @ 25В°C	32A (Tc)
Drain to Source Voltage (Vdss)	120V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 60V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	150В°C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	13.8mOhm @ 16A, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVIII-H ->
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 500ВµA
Вес, г	1