TK39N60W5,S1VF, MOSFET Power MOSFET N-Channel
2472 шт., срок 6-9 недель
7 200 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 30 |
| Fall Time: | 9 ns |
| Id - Continuous Drain Current: | 38.8 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 270 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 135 nC |
| Rds On - Drain-Source Resistance: | 62 mOhms |
| Rise Time: | 120 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 200 ns |
| Typical Turn-On Delay Time: | 180 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 38 |
Техническая документация
Datasheet TK39N60W5.S1VF
pdf, 246 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
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