TK560P60Y,RQ, MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
DTMOSV Super Junction MOSFETs Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 2000 |
Fall Time: | 8 ns |
Id - Continuous Drain Current: | 7 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 60 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 14.5 nC |
Rds On - Drain-Source Resistance: | 560 mOhms |
Rise Time: | 20 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 105 ns |
Typical Turn-On Delay Time: | 50 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Вес, г | 0.36 |
Техническая документация
Datasheet
pdf, 449 КБ
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