TK560P60Y,RQ, MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A

TK560P60Y,RQ, MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A
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Номенклатурный номер: 8005269461
Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
DTMOSV Super Junction MOSFETs Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.

Технические параметры

Brand: Toshiba
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2000
Fall Time: 8 ns
Id - Continuous Drain Current: 7 A
Manufacturer: Toshiba
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: DPAK-3(TO-252-3)
Pd - Power Dissipation: 60 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 14.5 nC
Rds On - Drain-Source Resistance: 560 mOhms
Rise Time: 20 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 105 ns
Typical Turn-On Delay Time: 50 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Вес, г 0.36

Техническая документация

Datasheet
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