TK9A90E,S4X, MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS
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Описание
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π-MOS VIII MOSFETs Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 50 |
Fall Time: | 35 ns |
Id - Continuous Drain Current: | 9 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 50 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 46 nC |
Rds On - Drain-Source Resistance: | 1 Ohms |
Rise Time: | 40 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 140 ns |
Typical Turn-On Delay Time: | 80 ns |
Vds - Drain-Source Breakdown Voltage: | 900 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 225 КБ
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