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TPH2R506PL,L1Q, MOSFETs N-Ch 60V 4180pF 60nC 160A 132W

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24369 шт., срок 6-9 недель

1 960 ֏

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Номенклатурный номер: 8005269886

Бренд: Toshiba

Описание

Unclassified

U-MOSIX-H Low Voltage Enhancement Mode MOSFETs Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.Learn More

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	5000
Fall Time:	13 ns
Id - Continuous Drain Current:	160 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOP-8
Pd - Power Dissipation:	132 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	60 nC
Rds On - Drain-Source Resistance:	1.9 mOhms
Rise Time:	7.1 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	0.08