TPH2R608NH,L1Q, MOSFETs Power MOSFET N-Channel Single
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Описание
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U-MOSVIII-H Low Voltage High Efficiency MOSFETsToshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 168 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOP-8 |
| Pd - Power Dissipation: | 142 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 72 nC |
| Rds On - Drain-Source Resistance: | 2.6 mOhms |
| Rise Time: | 11 ns |
| Series: | TPH2R608NH |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | U-MOSVIII-H |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 56 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 15 ns |
| Id - Continuous Drain Current | 168 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SOP-Advance-8 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 142 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 72 nC |
| Rds On - Drain-Source Resistance | 2.6 mOhms |
| Rise Time | 11 ns |
| Series | TPH2R608NH |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | U-MOSVIII-H |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 56 ns |
| Typical Turn-On Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 2 V |
| Вес, г | 0.08 |
Техническая документация
Datasheet
pdf, 265 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
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