TPH6R30ANL,L1Q, MOSFET U-MOSVIII-H 100V 66A 55nC MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSVIII-H Low Voltage High Efficiency MOSFETsToshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 12 ns |
| Id - Continuous Drain Current: | 66 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOP-Advance-8 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 54 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Rds On - Drain-Source Resistance: | 5.1 mOhms |
| Rise Time: | 7 ns |
| Series: | TPH6R30ANL |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | U-MOSVIII-H |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 58 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Maximum Continuous Drain Current - (A) | 66 |
| Maximum Drain Source Resistance - (mOhm) | 6300@10V |
| Maximum Drain Source Voltage - (V) | 100 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Pin Count | 8 |
| Standard Package Name | SOP |
| Supplier Package | SOP Advance |
| Typical Gate Charge @ 10V - (nC) | 55 |
| Typical Gate Charge @ Vgs - (nC) | 27@4.5VI55@10V |
| Typical Input Capacitance @ Vds - (pF) | 3300@50V |
| Вес, г | 0.36 |
Техническая документация
Datasheet
pdf, 605 КБ
Документация
pdf, 580 КБ
Сроки доставки
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