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TPN4R712MD,L1Q, MOSFET P-Channel Mosfet 20V UMOS-VI

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Номенклатурный номер: 8005269919

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

P-Channel MOSFETs Toshiba P-Channel MOSFETs product offering features P-channel power MOSFETs for load switching in ultra-portable mobile computing devices and battery protection circuits for large capacity batteries. Developed using advanced trench-gate processes and packaging technologies, the P-channel MOSFETs are optimized to provide low on-resistance. These low on-resistance power MOSFETs also offer high current ratings, low capacitance, and high permissible power dissipation within a small form factor to meet the lower voltage and lower power requirements of system power supplies in portable electronics applications.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	5000
Fall Time:	145 ns
Id - Continuous Drain Current:	36 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TSON-8
Pd - Power Dissipation:	42 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	65 nC
Rds On - Drain-Source Resistance:	4.7 mOhms
Rise Time:	11 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	443 ns
Typical Turn-On Delay Time:	18 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Вес, г	0.02