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TTC012(Q), Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V

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395 шт., срок 6-9 недель

1 250 ֏

1 шт. на сумму 1 250 ֏

Номенклатурный номер: 8005269953

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Bipolar Transistors Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Технические параметры

Brand:	Toshiba
Collector- Base Voltage VCBO:	800 V
Collector- Emitter Voltage VCEO Max:	375 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
DC Collector/Base Gain hFE Min:	80 at 1 mA, 5 V
DC Current Gain hFE Max:	250 at 1 mA, 5 V
Emitter- Base Voltage VEBO:	8 V
Factory Pack Quantity:	200
Manufacturer:	Toshiba
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Packaging:	Tube
Pd - Power Dissipation:	1.1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.36