2N7002BKW,115, MOSFET 2N7002BKW/SOT323/SC-70

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Номенклатурный номер: 8005271944

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Транзистор полевой MOSFET N-канальный 60В 310мА, 0.88Вт

Brand	Nexperia
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	7 ns
Id - Continuous Drain Current	310 mA
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Package / Case	SOT-323-3
Packaging	Cut Tape or Reel
Pd - Power Dissipation	330 mW(1/3 W)
Product	MOSFET Small Signal
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	0.5 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	1.6 Ohms
Rise Time	6 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel Trench MOSFET
Type	Enhancement
Typical Turn-Off Delay Time	12 ns
Typical Turn-On Delay Time	5 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	1.1 V
Channel Type	N
Maximum Continuous Drain Current	310 mA
Maximum Drain Source Resistance	2 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	330 mW
Minimum Gate Threshold Voltage	1.1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-323
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Width	1.35mm
Вес, г	0.005