SI1016X-T1-GE3, MOSFETs N/P-Ch MOSFET 700/1200 mohms@4.5V
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см. техническую документацию
см. техническую документацию
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Описание
Unclassified
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 0.4 S, 1 S |
| Id - Continuous Drain Current: | 400 mA, 600 mA |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-563-6 |
| Part # Aliases: | SI1016X-GE3 |
| Pd - Power Dissipation: | 280 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 750 pC, 1.5 nC |
| Rds On - Drain-Source Resistance: | 750 mOhms, 1.2 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 25 ns, 35 ns |
| Typical Turn-On Delay Time: | 5 ns, 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.032 |
Техническая документация
Datasheet
pdf, 153 КБ
