SI1869DH-T1-E3, MOSFETs -20V Vds 8V Vgs SOT-363
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см. техническую документацию
см. техническую документацию
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Описание
Unclassified
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 1.2 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-363-6 |
| Part # Aliases: | SI1869DH-T1-BE3 SI1869DH-E3 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 165 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Case | SC70 |
| Kind of integrated circuit | high-side |
| Kind of output | P-Channel |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| Number of channels | 1 |
| On-state resistance | 132mΩ |
| Output current | 1.2A |
| Type of integrated circuit | power switch |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 221 КБ
