SI2318DS-T1-GE3, MOSFETs 40V 3.9A 1.25W 45mohm @ 10V
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Описание
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SI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 3000 |
Fall Time: | 15 ns |
Id - Continuous Drain Current: | 3 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOT-23-3 |
Part # Aliases: | SI2318DS-T1-BE3 SI2318DS-GE3 |
Pd - Power Dissipation: | 750 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 10 nC |
Rds On - Drain-Source Resistance: | 45 mOhms |
Rise Time: | 12 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 154 КБ
Трёхмерное изображение изделия
pdf, 194 КБ