SI2323CDS-T1-GE3, MOSFET -20V Vds 8V Vgs SOT-23
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см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SI2 Series TrenchFET® Power MOSFETsVishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2323CDS-T1-BE3 SI2323CDS-GE3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9 nC |
| Rds On - Drain-Source Resistance: | 39 mOhms |
| Rise Time: | 23 ns |
| Series: | SI2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 6A(Tc) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090pF @ 10V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 1.25W(Ta), 2.5W(Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.6A, 4.5V |
| Series | TrenchFETВ® |
| Supplier Device Package | SOT-23-3(TO-236) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±8V |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
| Вес, г | 0.05 |
Техническая документация
si2323cds-1764334
pdf, 221 КБ
Документация
pdf, 184 КБ
