SI2323DS-T1-E3, MOSFETs 20V 3.7A 0.039Ohm
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см. техническую документацию
940 ֏
от 10 шт. —
760 ֏
от 100 шт. —
498 ֏
от 500 шт. —
413 ֏
Добавить в корзину 1 шт.
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Альтернативные предложения1
Описание
Unclassified
Описание Транзистор P-МОП, полевой, -20В, -4,7А, SOT23 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 48 ns |
| Forward Transconductance - Min: | 16 S |
| Id - Continuous Drain Current: | 4.7 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2323DS-T1-BE3 SI2323DS-E3 |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Rds On - Drain-Source Resistance: | 39 mOhms |
| Rise Time: | 43 ns |
| Series: | SI2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 71 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.7 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 24 nC @ 8 V |
| Width | 1.4mm |
| Case | SOT23 |
| Drain current | -3.8A |
| Drain-source voltage | -20V |
| Gate charge | 13.6nC |
| Gate-source voltage | ±8V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 68mΩ |
| Polarisation | unipolar |
| Power dissipation | 1.1W |
| Pulsed drain current | -20A |
| Type of transistor | P-MOSFET |
| Вес, г | 0.01 |
