SI2337DS-T1-E3, MOSFET -80V Vds 20V Vgs SOT-23
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SI2 Series TrenchFET® Power MOSFETsVishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 4.3 S |
| Id - Continuous Drain Current: | 2.2 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2337DS-T1-BE3 SI2337DS-E3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Rds On - Drain-Source Resistance: | 270 mOhms |
| Rise Time: | 15 ns |
| Series: | SI2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Continuous Drain Current (Id) @ 25В°C | 2.2A |
| Power Dissipation-Max (Ta=25В°C) | 760mW |
| Rds On - Drain-Source Resistance | 270mО© @ 1.2A,10V |
| Transistor Polarity | P Channel |
| Vds - Drain-Source Breakdown Voltage | 80V |
| Vgs - Gate-Source Voltage | 4V @ 250uA |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 222 КБ
Datasheet SI2337DS-T1-E3
pdf, 255 КБ
