SI3440DV-T1-E3, MOSFETs 150V Vds 20V Vgs TSOP-6
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Описание
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Si3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 15 ns |
Forward Transconductance - Min: | 4.1 S |
Id - Continuous Drain Current: | 1.5 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TSOP-6 |
Part # Aliases: | SI3440DV-E3 |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 8 nC |
Rds On - Drain-Source Resistance: | 375 mOhms |
Rise Time: | 10 ns |
Series: | SI3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 150 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 188 КБ