SI3460DDV-T1-GE3, MOSFET 20V Vds 8V Vgs TSOP-6
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Si3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 8 ns |
Id - Continuous Drain Current: | 7.9 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TSOP-6 |
Part # Aliases: | SI3460DDV-T1-BE3 SI3460DDV-GE3 |
Pd - Power Dissipation: | 2.7 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 18 nC |
Rds On - Drain-Source Resistance: | 28 mOhms |
Rise Time: | 12 ns |
Series: | SI3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 21 ns |
Typical Turn-On Delay Time: | 6 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain |
ECCN (US) | EAR99 |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 7.9 |
Maximum Drain Source Resistance (mOhm) | 28@4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 1700 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 6 |
Pin Count | 6 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SO |
Supplier Package | TSOP |
Typical Fall Time (ns) | 8 |
Typical Gate Charge @ Vgs (nC) | 12@8V|6.7@4.5V |
Typical Input Capacitance @ Vds (pF) | 666@10V |
Typical Rise Time (ns) | 11|12 |
Typical Turn-Off Delay Time (ns) | 21|19 |
Typical Turn-On Delay Time (ns) | 6|5 |
Maximum Continuous Drain Current | 7.9 A |
Maximum Drain Source Voltage | 20 V |
Mounting Type | Surface Mount |
Package Type | TSOP-6 |
Вес, г | 0.02 |