SI3477DV-T1-GE3, MOSFETs -12V Vds 10V Vgs TSOP-6
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см. техническую документацию
см. техническую документацию
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Описание
Unclassified
Si3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 35 ns |
| Forward Transconductance - Min: | 30 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSOP-6 |
| Part # Aliases: | SI3477DV-GE3 |
| Pd - Power Dissipation: | 4.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 90 nC |
| Rds On - Drain-Source Resistance: | 17.5 mOhms |
| Rise Time: | 30 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Typical Turn-Off Delay Time: | 65 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 62 КБ
Трёхмерное изображение изделия
zip, 54 КБ
