SI3483CDV-T1-GE3, MOSFETs -30V Vds 20V Vgs TSOP-6
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Описание
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Описание Транзистор P-MOSFET, полевой, -30В, -7А, 2,7Вт, TSOP6 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 8 |
Maximum Diode Forward Voltage (V) | 1.2 |
Maximum Drain Source Resistance (mOhm) | 34@10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 2000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | NRND |
PCB changed | 6 |
Pin Count | 6 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SOP |
Supplier Package | TSOP |
Typical Fall Time (ns) | 10|15 |
Typical Gate Charge @ 10V (nC) | 22 |
Typical Gate Charge @ Vgs (nC) | 22@10V|11.5@4.5V |
Typical Input Capacitance @ Vds (pF) | 1000@15V |
Typical Rise Time (ns) | 135|15 |
Typical Turn-Off Delay Time (ns) | 25|30 |
Typical Turn-On Delay Time (ns) | 45|10 |
Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 277 КБ