SI3552DV-T1-E3, MOSFETs RECOMMENDED ALT SI3552DV-GE3

SI3552DV-T1-E3, MOSFETs RECOMMENDED ALT SI3552DV-GE3
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890 ֏
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от 100 шт.476 ֏
от 500 шт.385 ֏
Добавить в корзину 1 шт. на сумму 890 ֏
Номенклатурный номер: 8005284166

Описание

Unclassified
Si3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.

Технические параметры

Brand: Vishay Semiconductors
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: 3000
Id - Continuous Drain Current: 2.5 A, 1.8 A
Manufacturer: Vishay
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package/Case: TSOP-6
Part # Aliases: SI3552DV-E3
Pd - Power Dissipation: 1.15 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 3.2 nC, 3.6 nC
Rds On - Drain-Source Resistance: 105 mOhms, 200 mOhms
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Вес, г 0.02

Техническая документация