SI3552DV-T1-GE3, MOSFETs -30V Vds 20V Vgs TSOP-6 N&P PAIR
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Описание
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Si3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns, 7 ns |
| Forward Transconductance - Min: | 4.3 S, 2.4 S |
| Id - Continuous Drain Current: | 2.5 A, 1.8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | TSOP-6 |
| Part # Aliases: | SI3552DV-GE3 |
| Pd - Power Dissipation: | 1.15 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.2 nC, 3.6 nC |
| Rds On - Drain-Source Resistance: | 105 mOhms, 200 mOhms |
| Rise Time: | 9 ns, 12 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 13 ns, 12 ns |
| Typical Turn-On Delay Time: | 7 ns, 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 113 КБ
Трёхмерное изображение изделия
pdf, 299 КБ
