SI3590DV-T1-GE3, MOSFETs -30V Vds 12V Vgs TSOP-6 N&P PAIR
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 120 ֏
от 10 шт. —
890 ֏
от 100 шт. —
620 ֏
от 500 шт. —
465 ֏
Добавить в корзину 1 шт.
на сумму 1 120 ֏
Описание
Unclassified
N- & P-Channel Pair Thermally Enhanced MOSFETs Vishay N- and P-Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one package. These Vishay N- and P-Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 7 ns, 20 ns |
| Forward Transconductance - Min: | 10 S, 5 S |
| Id - Continuous Drain Current: | 3 A, 2 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | TSOP-6 |
| Part # Aliases: | SI3590DV-GE3 |
| Pd - Power Dissipation: | 1.15 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.5 nC, 6 nC |
| Rds On - Drain-Source Resistance: | 77 mOhms, 170 mOhms |
| Rise Time: | 12 ns, 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 13 ns, 20 ns |
| Typical Turn-On Delay Time: | 5 ns, 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 92 КБ
Трёхмерное изображение изделия
pdf, 298 КБ
