SI4413ADY-T1-E3, MOSFETs 30V 15A 3.0W 7.5mohm @ 10V

SI4413ADY-T1-E3, MOSFETs 30V 15A 3.0W 7.5mohm @ 10V
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см. техническую документацию
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Номенклатурный номер: 8005284189

Описание

Unclassified

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status NRND
HTS 8541.29.00.95
Lead Shape Gull-wing
Package Height 1.55(Max)
Package Width 4(Max)
Package Length 5(Max)
Mounting Surface Mount
PCB changed 8
Product Category Power MOSFET
Process Technology TrenchFET
Configuration Single Quad Drain Triple Source
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 10.5
Maximum Drain Source Resistance (mOhm) 7.5@10V
Typical Gate Charge @ Vgs (nC) 61@5V
Maximum Power Dissipation (mW) 3000
Typical Fall Time (ns) 97
Typical Rise Time (ns) 18
Typical Turn-Off Delay Time (ns) 170
Typical Turn-On Delay Time (ns) 21
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Supplier Package SOIC N
Pin Count 8
Standard Package Name SOP
Military No
Вес, г 1

Техническая документация

Datasheet SI4413ADYT1E3
pdf, 184 КБ