SI4488DY-T1-GE3, MOSFETs 150V Vds 20V Vgs SO-8
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см. техническую документацию
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Описание
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Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 3.5 |
| Maximum Drain Source Resistance (mOhm) | 50@10V |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1560 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ 10V (nC) | 30 |
| Typical Gate Charge @ Vgs (nC) | 30@10V |
| Typical Rise Time (ns) | 7 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Typical Turn-On Delay Time (ns) | 12 |
Техническая документация
Datasheet
pdf, 166 КБ
