LS4150GS08, Small Signal Switching Diodes 50 Volt 600mA 4.0 Amp IFSM
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
229 ֏
от 10 шт. —
163 ֏
от 100 шт. —
75 ֏
от 1000 шт. —
48 ֏
1 шт.
на сумму 229 ֏
Описание
Unclassified
Features • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction
Технические параметры
Average Forward Current | 300мА |
Forward Surge Current | 4А |
Forward Voltage Max | 1В |
Repetitive Peak Reverse Voltage | 50В |
Reverse Recovery Time | 4нс |
Квалификация | AEC-Q101 |
Количество Выводов | 2вывод(-ов) |
Максимальная Рабочая Температура | 175 C |
Стиль Корпуса Диода | MiniMELF |
Diode Configuration | Single |
Diode Technology | Silicon Junction |
Diode Type | Fast Switching Diode |
Maximum Continuous Forward Current | 600mA |
Maximum Forward Voltage Drop | 1V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | Quadro Melf |
Peak Non-Repetitive Forward Surge Current | 4A |
Peak Reverse Recovery Time | 4ns |
Peak Reverse Repetitive Voltage | 50V |
Pin Count | 2 |
Rectifier Type | Small Signal |
Capacitance | 2.5pF |
Case | MELF quadro, SOD80 |
Features of semiconductor devices | small signal |
Kind of package | reel, tape |
Leakage current | 0.1mA |
Load current | 0.6A |
Manufacturer | VISHAY |
Max. forward impulse current | 4A |
Max. forward voltage | 1V |
Max. off-state voltage | 50V |
Mounting | SMD |
Power dissipation | 0.5W |
Semiconductor structure | single diode |
Type of diode | Schottky switching |
Вес, г | 0.031 |
Техническая документация
Datasheet
pdf, 99 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 107 КБ
Datasheet
pdf, 90 КБ
Диоды импортные
pdf, 304 КБ