SI1013CX-T1-GE3, MOSFETs -20V Vds 8V Vgs SC89-3

SI1013CX-T1-GE3, MOSFETs -20V Vds 8V Vgs SC89-3
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580 ֏
от 10 шт.392 ֏
от 100 шт.165 ֏
от 1000 шт.114 ֏
Добавить в корзину 1 шт. на сумму 580 ֏
Номенклатурный номер: 8005289689

Описание

Unclassified

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 20
Maximum Gate Source Voltage (V) ±8
Maximum Continuous Drain Current (A) 0.45
Maximum Drain Source Resistance (mOhm) 760@4.5V
Typical Gate Charge @ Vgs (nC) 1.65@10V|1@2.5V
Typical Gate Charge @ 10V (nC) 1.65
Typical Input Capacitance @ Vds (pF) 45@10V
Maximum Power Dissipation (mW) 190
Typical Fall Time (ns) 8
Typical Rise Time (ns) 10
Typical Turn-Off Delay Time (ns) 10
Typical Turn-On Delay Time (ns) 9
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Standard Package Name SC
Supplier Package SC-89
Pin Count 3
Military No
Mounting Surface Mount
Package Height 0.8(Max)
Package Length 1.7(Max)
Package Width 0.95(Max)
PCB changed 3
Вес, г 0.003