SI1016CX-T1-GE3, MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Integrated MOSFET SolutionsVishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns, 11 ns |
| Forward Transconductance - Min: | 1 S, 2 S |
| Id - Continuous Drain Current: | 350 mA, 500 mA |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SC-89-6 |
| Pd - Power Dissipation: | 220 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.3 nC, 1.65 nC |
| Rds On - Drain-Source Resistance: | 396 mOhms, 756 mOhms |
| Rise Time: | 10 ns, 16 ns |
| Series: | SI1 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 10 ns, 26 ns |
| Typical Turn-On Delay Time: | 9 ns, 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Вес, г | 0.01 |
