SI1424EDH-T1-BE3, MOSFETs 20V N-CHANNEL (D-S)
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540 ֏
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от 1000 шт. —
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Описание
Unclassified
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 1.6 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-363-6 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | SI1424EDH-T1-GE3 |
| Pd - Power Dissipation: | 1.56 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 33 mOhms |
| Rise Time: | 0.3 us |
| Series: | SI1 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 3.8 us |
| Typical Turn-On Delay Time: | 0.15 us |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
