SI2369BDS-T1-GE3, MOSFETs 30-V (D-S) MOSFET P-CHANNEL
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Описание
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TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 10 S |
| Id - Continuous Drain Current: | 7.5 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12.9 nC |
| Rds On - Drain-Source Resistance: | 27 mOhms |
| Rise Time: | 6 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Base Product Number | SI2369 -> |
| Current - Continuous Drain (Id) @ 25В°C | 5.6A (Ta), 7.5A (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 745pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5A, 10V |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchFETВ® Gen IV -> |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +16V, -20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250ВµA |
| Вес, г | 4 |
Техническая документация
Datasheet
pdf, 208 КБ
Datasheet SI2369BDS-T1-GE3
pdf, 208 КБ
