SI3127DV-T1-GE3, MOSFETs -60V Vds 20V Vgs TSOP-6
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Описание
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Si3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
Brand: | Vishay/Siliconix |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 3000 |
Id - Continuous Drain Current: | 5.1 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TSOP-6 |
Pd - Power Dissipation: | 4.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 30 nC |
Rds On - Drain-Source Resistance: | 146 mOhms |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 305 КБ
Трёхмерное изображение изделия
pdf, 63 КБ
Трёхмерное изображение изделия
zip, 54 КБ