SI4190ADY-T1-GE3, MOSFET 100V Vds 20V Vgs SO-8
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Industrial Power Solutions Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 54 S |
| Id - Continuous Drain Current: | 18.4 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Part # Aliases: | SI4190ADY-GE3 |
| Pd - Power Dissipation: | 6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Rds On - Drain-Source Resistance: | 7.3 mOhms |
| Rise Time: | 11 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 31 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Resistance | 2.2 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 6 W |
| Minimum Gate Threshold Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 44.4 nC @ 10 V |
| Width | 4mm |
| Вес, г | 0.19 |
Техническая документация
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