SI4214DDY-T1-E3, MOSFETs 30V Vds 20V Vgs SO-8
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Описание
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Integrated MOSFET Solutions Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 27 S |
| Id - Continuous Drain Current: | 8.5 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOIC-8 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 3.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 19.5 mOhms |
| Rise Time: | 45 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.75 |
Техническая документация
Datasheet
pdf, 182 КБ
Трёхмерное изображение изделия
pdf, 95 КБ
