SI4434ADY-T1-GE3, MOSFETs 250V Vds 20V Vgs SO-8
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см. техническую документацию
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Описание
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ThunderFET® Power MOSFETs Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 10 S |
| Id - Continuous Drain Current: | 4.1 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.9 nC |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Rise Time: | 22 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.75 |
Техническая документация
Datasheet
pdf, 242 КБ
Трёхмерное изображение изделия
pdf, 74 КБ
Трёхмерное изображение изделия
zip, 59 КБ
