SI4435FDY-T1-GE3, MOSFET -30V Vds 20V Vgs SO-8
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 16 ns |
| Forward Transconductance - Min: | 25 S |
| Id - Continuous Drain Current: | 12.6 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 4.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 13.5 nC |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Rise Time: | 30 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 26 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Вес, г | 0.75 |
Техническая документация
Datasheet
pdf, 186 КБ
