SI4447ADY-T1-GE3, MOSFETs -40V Vds 20V Vgs SO-8
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Описание
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Si4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 14 S |
| Id - Continuous Drain Current: | 7.2 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 4.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Rise Time: | 12 ns |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 7.2 A |
| Maximum Drain Source Resistance | 0.062 O |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SO-8 |
| Pin Count | 8 |
| Series | TrenchFET |
| Automotive | No |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 7.2 |
| Maximum Drain Source Resistance (mOhm) | 45@10V |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 9|13 |
| Typical Gate Charge @ 10V (nC) | 25 |
| Typical Gate Charge @ Vgs (nC) | 25@10V|11.8@4.5V |
| Typical Input Capacitance @ Vds (pF) | 970@20V |
| Typical Rise Time (ns) | 12|33 |
| Typical Turn-Off Delay Time (ns) | 28|30 |
| Typical Turn-On Delay Time (ns) | 7|44 |
| Вес, г | 0.5066 |
Техническая документация
Datasheet
pdf, 217 КБ
Datasheet SI4447ADY-T1-GE3
pdf, 198 КБ
