IRF510STRRPBF, MOSFET 100V N-CH HEXFET D2-PAK
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (DВІPak)
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 800 |
Id - Continuous Drain Current: | 5.6 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | D2PAK-3(TO-263-3) |
Pd - Power Dissipation: | 43 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 8.3 nC |
Rds On - Drain-Source Resistance: | 540 mOhms |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Base Product Number | IRF510 -> |
Current - Continuous Drain (Id) @ 25В°C | 5.6A (Tc) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-263-3, DВІPak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-263 (DВІPak) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Вес, г | 4 |
Техническая документация
Datasheet
pdf, 211 КБ
Трёхмерное изображение изделия
pdf, 73 КБ