IRFP450LCPBF, MOSFETs 500V N-CH HEXFET
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Описание
Unclassified
МОП-транзистор 500V N-CH HEXFET
Технические параметры
| Id - непрерывный ток утечки | 14 A |
| Pd - рассеивание мощности | 190 W |
| Qg - заряд затвора | 74 nC |
| Rds Вкл - сопротивление сток-исток | 400 mOhms |
| Vds - напряжение пробоя сток-исток | 500 V |
| Vgs - напряжение затвор-исток | 30 V, + 30 V |
| Vgs th - пороговое напряжение затвор-исток | 2 V |
| Вид монтажа | Through Hole |
| Канальный режим | Enhancement |
| Категория продукта | МОП-транзистор |
| Количество каналов | 1 Channel |
| Конфигурация | Single |
| Максимальная рабочая температура | + 150 C |
| Минимальная рабочая температура | 55 C |
| Подкатегория | MOSFETs |
| Полярность транзистора | N-Channel |
| Размер фабричной упаковки | 500 |
| Серия | IRFP |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay Semiconductors |
| Упаковка | Tube |
| Упаковка / блок | TO-247-3 |
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 500 |
| Fall Time | 30 ns |
| Forward Transconductance - Min | 8.7 S |
| Height | 20.7 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 15.87 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 190 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 400 mOhms |
| Rise Time | 49 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 14 ns |
| Unit Weight | 1.340411 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 5.31 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Resistance | 400 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Power Dissipation | 190 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247AC |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 74 nC @ 10 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 14 |
| Maximum Drain Source Resistance (mOhm) | 400@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Standard Package Name | TO-247 |
| Supplier Package | TO-247AC |
| Tab | Tab |
| Typical Fall Time (ns) | 30 |
| Typical Gate Charge @ 10V (nC) | 74(Max) |
| Typical Gate Charge @ Vgs (nC) | 74(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 2200@25V |
| Typical Rise Time (ns) | 49 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Typical Turn-On Delay Time (ns) | 14 |
| Вес, г | 38 |
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