IRFR024PBF, MOSFET 60V N-CH HEXFET MOSFET D-PAK
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 60В, 9А, 42Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 14 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Maximum Drain Source Resistance (mOhm) | 100 10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 42 |
| Typical Gate Charge @ 10V (nC) | 25(Max) |
| Typical Gate Charge @ Vgs (nC) | 25(Max)10V |
| Typical Gate Plateau Voltage (V) | 6.1 |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Typical Gate to Source Charge (nC) | 5.8(Max) |
| Typical Input Capacitance @ Vds (pF) | 640 25V |
| Typical Output Capacitance (pF) | 360 |
| Typical Reverse Recovery Charge (nC) | 290 |
| Typical Reverse Recovery Time (ns) | 88 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 79 25V |
| Typical Rise Time (ns) | 58 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Continuous Drain Current - (A) | 14 |
| Maximum Drain Source Resistance - (mOhm) | 100@10V |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Typical Gate Charge @ 10V - (nC) | 25(Max) |
| Typical Gate Charge @ Vgs - (nC) | 25(Max)@10V |
| Typical Input Capacitance @ Vds - (pF) | 640@25V |
| Typical Output Capacitance - (pF) | 360 |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 60 V |
| Mounting Type | Surface Mount |
| Package Type | DPAK(TO-252) |
| Вес, г | 1.438 |
Техническая документация
Datasheet
pdf, 1060 КБ
Документация
pdf, 1060 КБ
