IRFU9110PBF, MOSFETs P-Chan 100V 3.1 Amp
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Описание
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The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Maximum Continuous Drain Current (A) | 3.1 |
| Maximum Drain Source Resistance (mOhm) | 1200@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-251 |
| Supplier Package | IPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 17 |
| Typical Gate Charge @ 10V (nC) | 8.7(Max) |
| Typical Gate Charge @ Vgs (nC) | 8.7(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 200@25V |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 10 |
| Drain Source On State Resistance | 1.2Ом |
| Power Dissipation | 25Вт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Непрерывный Ток Стока | 3.1А |
| Пороговое Напряжение Vgs | 4В |
| Стиль Корпуса Транзистора | TO-251 |
| Maximum Continuous Drain Current | 3.1 A |
| Maximum Drain Source Voltage | 100 V |
| Mounting Type | Through Hole |
| Package Type | IPAK(TO-251) |
| Вес, г | 0.33 |
