DTA114YM3T5G, Digital Transistors 100mA 50V BRT PNP
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см. техническую документацию
см. техническую документацию
410 ֏
от 10 шт. —
273 ֏
от 100 шт. —
110 ֏
от 1000 шт. —
72 ֏
1 шт.
на сумму 410 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors
Технические параметры
| Brand | ON Semiconductor |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Continuous Collector Current | 0.1 A |
| DC Collector/Base Gain Hfe Min | 80, 140 |
| DC Current Gain HFE Max | 80 |
| Factory Pack Quantity | 8000 |
| Height | 0.5 mm |
| Length | 1.2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-723-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 260 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors - Pre-Biased |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Series | DTA114YM3 |
| Subcategory | Transistors |
| Transistor Polarity | PNP |
| Typical Input Resistor | 10 kOhms |
| Unit Weight | 0.000045 oz |
| Width | 0.8 mm |
| Вес, г | 0.0013 |
Техническая документация
Datasheet
pdf, 175 КБ
