IRS2184SPBF, Gate Drivers Half Bridge DRVR 600V 10V to 20V
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см. техническую документацию
см. техническую документацию
3 600 ֏
от 10 шт. —
2 270 ֏
от 100 шт. —
1 970 ֏
от 250 шт. —
1 890 ֏
1 шт.
на сумму 3 600 ֏
Описание
Power\Power Management ICs\Gate Drivers
Описание ИС: драйвер; полумост MOSFET; high-/low-side,контр Характеристики Категория | Микросхема |
Тип | драйвер |
Вид | MOSFET |
Технические параметры
Brand: | Infineon Technologies |
Factory Pack Quantity: Factory Pack Quantity: | 3800 |
Fall Time: | 35 ns |
Features: | Synchronous |
Logic Type: | CMOS, TTL |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +125 C |
Maximum Turn-Off Delay Time: | 270 ns |
Maximum Turn-On Delay Time: | 680 ns |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Drivers: | 2 Driver |
Number of Outputs: | 2 Output |
Operating Supply Current: | 1.6 mA |
Operating Supply Voltage: | 10 V to 20 V |
Output Current: | 1.9 A |
Package / Case: | SOIC-8 |
Packaging: | Tube |
Pd - Power Dissipation: | 625 mW |
Product Category: | Gate Drivers |
Product Type: | Gate Drivers |
Product: | IGBT, MOSFET Gate Drivers |
Propagation Delay - Max: | 900 ns |
Rise Time: | 60 ns |
Subcategory: | PMIC-Power Management ICs |
Supply Voltage - Max: | 20 V |
Supply Voltage - Min: | 10 V |
Technology: | Si |
Type: | Half-Bridge |
Automotive | No |
Bridge Type | Half Bridge |
Driver Configuration | Inverting|Non-Inverting |
Driver Type | High and Low Side |
ECCN (US) | EAR99 |
High and Low Sides Dependency | Synchronous |
Input Logic Compatibility | CMOS|LSTTL|3.3V(Min)|5V |
Latch-Up Proof | Yes |
Lead Shape | Gull-wing |
Maximum Fall Time (ns) | 35 |
Maximum Operating Supply Voltage (V) | 20 |
Maximum Operating Temperature (°C) | 125 |
Maximum Power Dissipation (mW) | 625 |
Maximum Propagation Delay Time (ns) | 900 |
Maximum Rise Time (ns) | 60 |
Maximum Turn-Off Delay Time (ns) | 40 |
Maximum Turn-On Delay Time (ns) | 90 |
Minimum Operating Supply Voltage (V) | 10 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Drivers | 2 |
Number of Outputs | 2 |
Packaging | Tube |
Part Status | NRND |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | CMOS |
Reference Voltage (V) | 600(Max) |
Special Features | Under Voltage Lockout |
Standard Package Name | SO |
Supplier Package | SOIC N |
Type | IGBT|MOSFET |
Typical Input High Threshold Voltage (V) | 2.5(Min) |
Typical Input Low Threshold Voltage (V) | 0.8(Max) |
Brand | Infineon Technologies |
Configuration | Inverting, Non-Inverting |
Factory Pack Quantity | 475 |
Fall Time | 35 ns |
Features | Synchronous |
Height | 1.5 mm(Max) |
Length | 5 mm(Max) |
Logic Type | CMOS, LSTTL |
Manufacturer | Infineon |
Maximum Operating Temperature | +125 C |
Maximum Turn-Off Delay Time | 270 ns |
Maximum Turn-On Delay Time | 680 ns |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Operating Supply Current | 1.6 mA |
Operating Supply Voltage | 10 V to 20 V |
Output Current | 1.9 A |
Package / Case | SOIC-8 |
Pd - Power Dissipation | 625 mW |
Product | Half-Bridge Drivers |
Product Category | Gate Drivers |
Propagation Delay - Max | 900 ns |
Rise Time | 60 ns |
RoHS | Details |
Supply Voltage - Max | 20 V |
Supply Voltage - Min | 10 V |
Unit Weight | 0.057144 oz |
Width | 4 mm(Max) |
Package Type | 8-Lead SOIC |
Supply Voltage | 20V |
Вес, г | 1.62 |