DXT790AP5-13, Bipolar Transistors - BJT BIPOLAR TRANS,PNP 40V,3A
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см. техническую документацию
см. техническую документацию
580 ֏
от 10 шт. —
484 ֏
от 100 шт. —
308 ֏
от 500 шт. —
244 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
40V 3.2W 300@10mA,2V 3A PNP PowerDI-5 Bipolar Transistors - BJT ROHS
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 450 mV |
| Configuration: | Single |
| Continuous Collector Current: | -3 A |
| DC Collector/Base Gain hFE Min: | 300 |
| DC Current Gain hFE Max: | 800 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: | 5000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | PowerDI-5 |
| Pd - Power Dissipation: | 3.2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 3A |
| Collector Cut-Off Current (Icbo) | 20nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 450mV@300mA, 3A |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA, 2V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 3.2W |
| Transistor Type | PNP |
| Transition Frequency (fT) | 100MHz |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 134 КБ
