FZT658TA, Bipolar Transistors - BJT NPN High Voltage
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см. техническую документацию
см. техническую документацию
750 ֏
от 10 шт. —
660 ֏
от 100 шт. —
427 ֏
от 500 шт. —
334 ֏
1 шт.
на сумму 750 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный (BJT) транзистор NPN 400V 500mA 50MHz 2W Surface Mount SOT-223
Технические параметры
| Base Product Number | FZT658 -> |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 10V |
| ECCN | EAR99 |
| Frequency - Transition | 50MHz |
| HTSUS | 8541.29.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-261-4, TO-261AA |
| Power - Max | 2W |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-223 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Collector-Emitter Breakdown Voltage | 400V |
| Maximum DC Collector Current | 500mA |
| Pd - Power Dissipation | 2W |
| Maximum Collector Base Voltage | 400 V |
| Maximum Collector Emitter Voltage | 400 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 50 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum DC Current Gain | 50 |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Вес, г | 0.15 |
