ZTX857, Bipolar Transistors - BJT NPN Big Chip SELine
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 540 ֏
от 10 шт. —
1 190 ֏
от 100 шт. —
860 ֏
от 500 шт. —
680 ֏
1 шт.
на сумму 1 540 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 330 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 170 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3 A |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 80 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1.2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.45 |
Техническая документация
Datasheet
pdf, 101 КБ
