CSD17306Q5A, MOSFETs 30V N Channel NexFET Power MOSFET
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см. техническую документацию
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1 630 ֏
от 10 шт. —
1 280 ֏
от 100 шт. —
920 ֏
от 500 шт. —
730 ֏
1 шт.
на сумму 1 630 ֏
Описание
Unclassified
NexFET™ Power MOSFETs Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Forward Transconductance - Min: | 105 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.8 nC |
| Rds On - Drain-Source Resistance: | 4.2 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18.4 ns |
| Typical Turn-On Delay Time: | 7.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Forward Transconductance - Min | 105 S |
| Height | 1 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 6 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSONP-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 3.2 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 11.8 nC |
| Rds On - Drain-Source Resistance | 4.2 mOhm |
| RoHS | Details |
| Series | CSD17306Q5A |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 18.4 ns |
| Typical Turn-On Delay Time | 7.8 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Width | 4.9 mm |
| Continuous Drain Current (Id) | 24A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.7mΩ@8V, 22A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.6V@250uA |
| Power Dissipation (Pd) | 3.2W |
| Type | 1PCSNChannel |
| Вес, г | 0.09 |
Техническая документация
Datasheet
pdf, 384 КБ
Документация
pdf, 384 КБ
