CSD19505KCS, MOSFETs 80V N-CH NexFET Pwr MOSFET
![Фото 1/2 CSD19505KCS, MOSFETs 80V N-CH NexFET Pwr MOSFET](https://static.chipdip.ru/lib/239/DOC025239204.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/752/DOC043752585.jpg)
3 660 ֏
от 10 шт. —
3 390 ֏
от 50 шт. —
2 580 ֏
от 100 шт. —
2 070 ֏
1 шт.
на сумму 3 660 ֏
Описание
Unclassified
Описание Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 6 ns |
Forward Transconductance - Min: | 262 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 76 nC |
Rds On - Drain-Source Resistance: | 3.1 mOhms |
Rise Time: | 16 ns |
Series: | CSD19505KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current - (A) | 150 |
Maximum Drain Source Resistance - (mOhm) | 3.1@10V |
Maximum Drain Source Voltage - (V) | 80 |
Maximum Gate Source Voltage - (V) | ?20 |
Maximum Gate Threshold Voltage - (V) | 3.2 |
Maximum Power Dissipation - (mW) | 300000 |
Military | No |
Number of Elements per Chip | 1 |
Operating Temperature - (?C) | -55~175 |
Packaging | Tube |
Pin Count | 3 |
Process Technology | NexFET |
Supplier Package | TO-220 |
Typical Gate Charge @ 10V - (nC) | 76 |
Typical Gate Charge @ Vgs - (nC) | 76@10V |
Typical Input Capacitance @ Vds - (pF) | 6090@40V |
Вид | MOSFET |
Тип | полевой |
Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 1070 КБ
Datasheet CSD19505KCS
pdf, 819 КБ