CSD19531Q5A, MOSFET 100V 5.3mOhm Pwr MOSFET
![Фото 1/2 CSD19531Q5A, MOSFET 100V 5.3mOhm Pwr MOSFET](https://static.chipdip.ru/lib/214/DOC027214401.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/147/DOC021147808.jpg)
2 200 ֏
от 10 шт. —
1 830 ֏
от 100 шт. —
1 370 ֏
от 250 шт. —
1 260 ֏
Добавить в корзину 1 шт.
на сумму 2 200 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
TI N-Channel 8-23-12
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 5.2 ns |
Forward Transconductance - Min: | 82 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 3.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 37 nC |
Rds On - Drain-Source Resistance: | 6.4 mOhms |
Rise Time: | 5.8 ns |
Series: | CSD19531Q5A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 18.4 ns |
Typical Turn-On Delay Time: | 6 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
RoHS Compliant | Yes |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Resistance | 6400000 Ω |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Threshold Voltage | 2.7V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | VSONP |
Pin Count | 8 |
Series | NexFET |
Transistor Material | Si |
Вес, г | 0.09 |
Техническая документация
Datasheet
pdf, 767 КБ