CSD75208W1015, MOSFET 20V P-channel NexFET Pwr MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETs Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 7.5 S |
| Id - Continuous Drain Current: | 1.6 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | DSBGA-6 |
| Pd - Power Dissipation: | 750 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.5 nC |
| Rds On - Drain-Source Resistance: | 68 mOhms, 108 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 11 ns, 11 ns |
| Forward Transconductance - Min | 7.5 S, 7.5 S |
| Id - Continuous Drain Current | -1.6 A, -1.6 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | DSBGA-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 750 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 2.5 nC, 2.5 nC |
| Rds On - Drain-Source Resistance | 56 mOhms, 56 mOhms |
| Rise Time | 5 ns, 5 ns |
| RoHS | Details |
| Series | CSD75208W1015 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Typical Turn-Off Delay Time | 29 ns, 29 ns |
| Typical Turn-On Delay Time | 9 ns, 9 ns |
| Vds - Drain-Source Breakdown Voltage | -20 V, -20 V |
| Vgs - Gate-Source Voltage | -6 V, -6 V |
| Vgs th - Gate-Source Threshold Voltage | -1.1 V, -1.1 V |
| Continuous Drain Current (Id) | 1.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 68mΩ@1A, 4.5V |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.1V@250uA |
| Input Capacitance (Ciss@Vds) | 410pF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 750mW |
| Total Gate Charge (Qg@Vgs) | 2.5nC@4.5V |
| Type | 2 P-Channel |
| Вес, г | 0.0014 |
